This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016-2018
Title: Tzung-Shiun Lu: Innovator in Gas Injector Technology
Introduction
Tzung-Shiun Lu is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of gas injector technology. With a total of 2 patents, his work focuses on enhancing the uniformity of chemical vapor deposition and etching processes.
Latest Patents
One of Tzung-Shiun Lu's latest patents is for moveable and adjustable gas injectors designed for an etching chamber. This innovative apparatus aims to increase the uniformity in critical dimensions during substrate processing. The system comprises multiple gas injectors that can be moved along a track within the etching chamber. Each injector is equipped with a throttling valve or nozzle, allowing for precise adjustments to the processing gas flow rate. The method involves performing chemical deposition or etching while measuring critical dimension uniformity. Adjustments can be made to the location of the gas injectors or the flow rate to enhance uniformity.
Career Highlights
Tzung-Shiun Lu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in gas injector technology has positioned him as a key player in advancing manufacturing processes.
Collaborations
He has collaborated with notable colleagues, including Chun-Lang Chen and Shih-Hao Yang, contributing to the development of innovative solutions in semiconductor manufacturing.
Conclusion
Tzung-Shiun Lu's work in gas injector technology represents a significant advancement in the semiconductor industry. His patents reflect a commitment to improving manufacturing processes and achieving greater precision in substrate processing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile