Tzeng-Fei Wen

Title: The Innovations of Tzeng-Fei Wen

Introduction

Tzeng-Fei Wen is a prominent inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of Tzeng-Fei Wen's latest patents is a method for fabricating a semiconductor device. This method involves sequentially forming an agate dielectric layer and a first gate layer on a semiconductor substrate. The gate dielectric layer is positioned between the first gate layer and the semiconductor substrate. The process includes forming at least one opening in the first gate layer, applying a first dielectric layer conformally on the semiconductor substrate, and creating a second gate layer that fills the opening and overlaps the first gate layer. Another notable patent is for a semiconductor device that features two floating gates, a control gate, and a first dielectric layer. In this design, the floating gates are situated on a semiconductor substrate, with the control gate partially overlapping each floating gate.

Career Highlights

Throughout his career, Tzeng-Fei Wen has worked with notable companies in the semiconductor industry, including United Microelectronics Corporation and Altasens, Inc. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor fabrication.

Collaborations

Tzeng-Fei Wen has collaborated with esteemed colleagues such as Giuseppe Rossi and Ju-Hsin Yen. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Tzeng-Fei Wen's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.