Tushar Sharma

Title: Tushar Sharma: Innovator in Memory Cell Technology

Introduction

Tushar Sharma is a notable inventor based in East Delhi, India. He has made significant contributions to the field of memory cell technology, holding three patents to his name. His work primarily focuses on enhancing the performance and efficiency of static random-access memory (SRAM) cells.

Latest Patents

One of Tushar's latest patents is a dual port memory cell with improved access resistance. This patent describes a circuit layout of a dual port SRAM cell, which includes active regions in a substrate. The design features polysilicon gate electrodes that define the transistors of the memory cell. The eight transistor (8T) memory cell layout is characterized by a reduced aspect ratio and a non-polysilicon bit line discharge path routing. This is achieved by positioning an active region for the first port opposite an active region for the second port, while consolidating power line nodes at the central portion of the memory cell.

Career Highlights

Tushar Sharma is currently employed at STMicroelectronics International N.V., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory cells, making them more efficient and reliable.

Collaborations

Tushar collaborates with talented individuals such as Shishir Kumar and Tanmoy Roy, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Tushar Sharma's contributions to memory cell technology exemplify his dedication to innovation and excellence. His patents reflect a deep understanding of the complexities involved in memory design, positioning him as a key player in the industry.