Taoyuan, Taiwan

Tung-Liang Yang

This inventor holds 1 USPTO granted patent. Top assignee: Nanya Technology Group. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tung-Liang Yang. Retrieved from https://idiyas.com/inventor/tung-liang-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Tung-Liang Yang: Innovator in Semiconductor Fabrication

Introduction

Tung-Liang Yang is a notable inventor based in Tao-Yuan Hsien, Taiwan. He has made significant contributions to the field of semiconductor fabrication, particularly through his innovative methods that enhance the efficiency and accuracy of the manufacturing process.

Latest Patents

Yang holds a patent for a method of improving alignment for semiconductor fabrication. This patent details a process that involves providing a substrate with a memory array area and a peripheral area. The method includes laying down columns of word lines and incorporating alignment marks within the peripheral area. A dielectric layer is deposited to cover these components, followed by the application of a thin SiN film and a polysilicon hard mask layer. The process culminates in the formation of a GV photoresist that is exposed to radiation, allowing for precise etching and alignment in semiconductor manufacturing.

Career Highlights

Tung-Liang Yang is currently associated with Nanya Technology Group, a prominent player in the semiconductor industry. His work at Nanya Technology Group has positioned him as a key contributor to advancements in semiconductor technology.

Collaborations

Yang collaborates with Yi-Nan Chen, a fellow innovator in the field. Their partnership exemplifies the collaborative spirit that drives innovation in technology.

Conclusion

Tung-Liang Yang's contributions to semiconductor fabrication through his patented methods highlight his role as an influential inventor in the industry. His work continues to impact the efficiency and effectiveness of semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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