The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Mar. 30, 2004
Tung-Liang Yang, Tao-Yuan Hsien, TW;
Yi-Nan Chen, Taipei, TW;
Nanya Technology Group, Tao-Yuan Hsien, TW;
Abstract
A method of improving alignment for the fabrication of bit line contacts (CBs) is disclosed. A substrate including a memory array area and a peripheral area is provided. A plurality of columns of word lines are laid on the substrate within the memory array area, and at least one alignment mark is provided within the peripheral area. A dielectric layer is deposited over the memory array area and peripheral area to cover the plural word lines and the alignment mark. A thin SiN film is deposited over the dielectric layer. A polysilicon hard mask layer is then deposited over the thin SiN film. A GV photoresist is formed on the polysilicon hard mask layer. The GV photoresist is subjected to suitable radiation exposure and then developed to form an opening that exposes a portion of the polysilicon hard mask layer above the alignment mark. The exposed polysilicon hard mask layer is then etched away through the opening, thereby exposing a portion of the thin SiN film within the opening.