This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2023.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2023
Title: The Innovative Contributions of Tung-Hsi Hsieh
Introduction
Tung-Hsi Hsieh is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in semiconductor arrangement formation.
Latest Patents
Hsieh holds a patent for a method of forming a semiconductor arrangement. This method includes forming a patterned photoresist over the top surface of a substrate. It also involves doping a first portion of the substrate using the patterned photoresist. Afterward, the patterned photoresist is removed using a gas comprising fluoride, leaving fluoride residue on the substrate's surface. Finally, the substrate is treated with nitrous oxide to eliminate the fluoride residue. This patent showcases Hsieh's expertise in semiconductor technology.
Career Highlights
Hsieh is associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work has contributed to the company's reputation for innovation and excellence in semiconductor manufacturing.
Collaborations
Hsieh has collaborated with notable colleagues, including Ting-Jui Chen and Chen Chih-Fen. These collaborations have further enhanced his contributions to the field.
Conclusion
Tung-Hsi Hsieh's innovative work in semiconductor arrangement formation exemplifies his commitment to advancing technology. His contributions continue to influence the semiconductor industry positively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile