Tokyo, Japan

Tsuyoshi Wakisaka


Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Chiyoda-ku, JP (2004)
  • Tokyo, JP (2004 - 2005)

Company Filing History:


Years Active: 2004-2005

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4 patents (USPTO):Explore Patents

Title: Tsuyoshi Wakisaka: Innovator in Semiconductor Laser Technology

Introduction

Tsuyoshi Wakisaka is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor laser technology, holding a total of 4 patents. His work focuses on enhancing the performance and functionality of semiconductor laser devices.

Latest Patents

Wakisaka's latest patents include a semiconductor laser device with a strain reduction cushion function, a semiconductor laser module, and a semiconductor laser device fabrication method. The semiconductor laser element is fixed onto a submount by forming a metallic thin film at a region on the surface of a p-side electrode of the semiconductor laser element. The periphery of the thin metallic film is recessed from the periphery of the p-side electrode by a predetermined width. This metallic thin film is thermally processed together with the p-side electrode to increase the size of the grains and is connected through a solder layer to the submount. Parts of the p-side electrode and the submount, the metallic thin film, and the solder layer include gold (Au) to improve the cushion function of the semiconductor laser device.

Additionally, his patent on the semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the device or module describes a structure where an n-side electrode, an n-substrate, an n-buffer layer, a GRIN-SCH-MQW active layer, a p-spacer, a p-cladding layer, a p-contact layer, and a p-side electrode are laminated in that order. Above the n-buffer layer, the GRIN-SCH-MQW layer and the p-spacer layer occupy a narrower area than the n-substrate in a direction that is at right angles to the laser emission direction. The remaining area is occupied by a p-blocking layer and an n-blocking layer. Within the p-spacer layer, a first diffraction grating and a second diffraction grating are embedded, with a current non-injection area provided between the first and second diffraction grating and the p-side electrode.

Career Highlights

Wakisaka is currently employed at Furukawa Electric Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of laser devices, making them more efficient and effective for various applications.

Collaborations

Throughout his career, Wakisaka

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