The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Nov. 04, 2002
Tsuyoshi Wakisaka, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Junji Yoshida, Tokyo, JP;
Toshio Kimura, Tokyo, JP;
Shu Namiki, Tokyo, JP;
Tsuyoshi Wakisaka, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Junji Yoshida, Tokyo, JP;
Toshio Kimura, Tokyo, JP;
Shu Namiki, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
An n-side electrode, an n-substrate, an n-buffer layer, a GRIN-SCH-MQW active layer, a p-spacer, a p-cladding layer, a p-contact layer, and a p-side electrode are laminated one on top another in that order. Above the n-buffer layer, the GRIN-SCH-MQW layer and the p-spacer layer occupy a narrower area than the n-substrate in a direction that is at right angles to the laser emission direction, wherein the remaining area is occupied by a p-blocking layer and an n-blocking layer. Within the p-spacer layer are embedded a first diffraction grating and a second diffraction grating. Between the first and the second diffraction grating and the p-side electrode is provided a current non-injection area.