Location History:
- Yamanashi, JP (2008 - 2009)
- Nakakoma-gun, JP (2012)
Company Filing History:
Years Active: 2008-2012
Title: Tsutomu Komatani: Innovator in Semiconductor Technology
Introduction
Tsutomu Komatani is a notable inventor based in Yamanashi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
One of his latest patents is titled "Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film." This invention includes a GaN-based semiconductor layer formed on a substrate, along with an insulating film composed of silicon nitride, silicon oxide, or silicon oxide nitride. The composition ratios of these materials are carefully controlled to optimize the device's performance. Another significant patent is "Semiconductor device and method of fabricating the same," which features a silicon nitride film on a nitride semiconductor's crystal surface, with a hydrogen content of 15 percent or less.
Career Highlights
Tsutomu Komatani is currently employed at Eudyna Devices Inc., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.
Collaborations
He has collaborated with notable colleagues such as Shunsuke Kurachi and Masahiro Tanaka, contributing to various projects that enhance semiconductor technology.
Conclusion
Tsutomu Komatani's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.