Eudyna Devices Inc.

Tsutomu Komatani

Shunsuke Kurachi

Masahiro Tanaka

A semiconductor device includes a GaN-based semiconductor layer formed on a substrate, and an insulating film composed of any one of silicon nitride in which the composition ratio of silicon to nitrogen is 0.85 to 3.0, silicon oxide in which the composition ratio of silicon to oxygen is 0.6 to 3.0, or silicon oxide nitride in which the composition ratio of silicon to nitrogen and oxygen is 0.6 to 3.0 that is formed on a surface of the GaN-based semiconductor layer, a gate electrode formed on the GaN-based semiconductor layer, and a source electrode and a drain electrode formed with the gate electrode therebetween.

Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film

A semiconductor device includes a silicon nitride (SiN) film provided on a crystal surface of a nitride semiconductor, the SiN film having a hydrogen content equal to or smaller than 15 percent.

Semiconductor device and method of fabricating the same

A semiconductor substrate includes: a semiconductor crystal layer grown on one face of a substrate; and a stress relaxation layer, which is formed on the other face opposite to the one face and the side face of the substrate and applies stress to the substrate in the same direction as the direction of stress which the semiconductor crystal layer applies to the substrate. In this case, stress of the semiconductor crystal layer to the substrate is offset. Therefore, warp of the semiconductor substrate and generation of cracks are inhibited.

Semiconductor substrate, substrate for semiconductor crystal growth, semiconductor device, optical semiconductor device, and manufacturing method thereof

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Yamanashi, Japan

Tsutomu Komatani