Company Filing History:
Years Active: 1998-2004
Title: Tsutomu Ishiba: Innovator in Semiconductor Technology
Introduction
Tsutomu Ishiba is a prominent inventor based in Kodaira, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on improving the characteristics of semiconductor elements, particularly through the development of III-V and GaAs single crystals.
Latest Patents
Ishiba's latest patents include innovations related to III-V single crystals and methods for producing them. One of his notable inventions involves a semiconductor device that utilizes the III-V single crystal. By exploiting the correlation between lattice distortions in a wafer and the threshold voltages of field effect transistors, he has developed a method to reduce these distortions. This reduction helps to mitigate the variability in the characteristics of semiconductor elements. The maximum difference in lattice distortions of a III-V single crystal at normal temperature is set to at most 4×10, and the density of silicon atoms in the crystal is limited to at most 1×10 cm. This ensures uniform characteristics in semiconductor elements derived from the III-V single crystal. Similarly, his work on GaAs single crystals follows the same principles, aiming to achieve uniform characteristics in semiconductor devices.
Career Highlights
Throughout his career, Tsutomu Ishiba has worked with notable companies such as Hitachi, Ltd. and Renesas Technology Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.
Collaborations
Ishiba has collaborated with esteemed colleagues, including Yoshihisa Fujisaki and Yukio Takano. These partnerships have further enriched his work and led to advancements in the semiconductor field.
Conclusion
Tsutomu Ishiba's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative approaches to III-V and GaAs single crystals continue to impact the industry positively.