Hitachi, Ltd.

Renesas Technology Corp.

Tsutomu Ishiba

Yoshihisa Fujisaki

Yukio Takano

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a III-V single crystal at a normal temperature is set to at most 4&times;10 , and the density of Si atoms contained in the III-V single crystal is set to at most 1&times;10 cm , whereby the characteristics of semiconductor elements whose parent material is the III-V single crystal can be made uniform.

III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer si reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4&times;10 , and the density of Si atoms contained in the GaAs single crystal is set to at most 1&times;10 cm , whereby the characteristics of semiconductor elements whose parent material is the GaAs single crystal can be made uniform.

GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4&times;10,and the density of Si atoms contained in the GaAs single crystal is set to at most 1&times;10,cm,, whereby the characteristics of semiconductor elements whose parent material is the GaAs single crystal can be made uniform.

GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the same

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and the minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent material (substrate) is the GaAs single crystal can be made uniform.

GaAs single crystal as well as method of producing the same, and

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements inthe wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent matrial is the GaAs single crystal can be made uniform.

Growing community of inventors

Kodaira, Japan

Tsutomu Ishiba