Yamanashi, Japan

Tsutom Igarashi


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2002-2003

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2 patents (USPTO):Explore Patents

Title: Tsutom Igarashi: Innovator in Compound Semiconductor Technology

Introduction

Tsutom Igarashi is a notable inventor based in Yamanashi, Japan. He has made significant contributions to the field of compound semiconductor devices, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of semiconductor technologies.

Latest Patents

Igarashi's latest patents include a method of manufacturing a compound semiconductor device. This invention aims to prevent leakage current between the upper and lower electrodes of a capacitor through an insulating protective film. The device features a first electrode formed on a compound semiconductor substrate, a dielectric film, and a second electrode, all designed to improve efficiency and functionality.

Another patent by Igarashi also addresses the same issue of leakage current in compound semiconductor devices. It incorporates similar structural elements, emphasizing the importance of the insulating protective film and the hydrogen-containing rate for optimal performance.

Career Highlights

Tsutom Igarashi is currently employed at Fujitsu Quantum Devices Limited, where he continues to innovate in the semiconductor field. His expertise and dedication have positioned him as a key player in advancing semiconductor technology.

Collaborations

Igarashi has collaborated with notable colleagues, including Kenji Arimochi and Mitsuji Nunokawa. Their combined efforts contribute to the ongoing development of cutting-edge semiconductor solutions.

Conclusion

Tsutom Igarashi's work in compound semiconductor technology showcases his commitment to innovation and excellence. His patents reflect a deep understanding of the challenges in the field and offer practical solutions to enhance device performance.

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