The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
May. 07, 2002
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Abstract
There is provided a compound semiconductor device having a capacitor, to prevent a leakage current flowing between an upper electrode and a lower electrode of the capacitor via an insulating protective film. The compound semiconductor device comprises a first electrode of a capacitor formed on a compound semiconductor substrate via a first insulating film, a dielectric film of the capacitor formed on the first electrode, a second electrode of a capacitor formed on the dielectric film, a second insulating film for covering an upper surface and side surfaces of the second electrode, and an insulating protective film for covering the second insulating film, the dielectric film, the first electrode and the first insulating film, and having a hydrogen containing rate which is larger than the second insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile