Company Filing History:
Years Active: 2007
Title: Tsung-Yuan Lee: Innovator in High Density ROM Technology
Introduction
Tsung-Yuan Lee, based in Tai-Chung, Taiwan, is a notable inventor recognized for his significant contribution to technology in the field of memory storage. With a focus on innovation, he holds a patent that enhances data storage efficiency and reliability, demonstrating his commitment to advancing electronic devices.
Latest Patents
One of Tsung-Yuan Lee's most remarkable achievements is his patent for a high density read-only memory (ROM) cell. This invention features a unique design that includes a first doped region of a second conductive type placed on a silicon substrate, complemented by multiple first heavily doped regions of a first conductive type. The configuration also involves a second doped region of the second conductive type, along with a gate situated on the surface of the silicon substrate. This innovative design greatly improves data storage capabilities, pushing the boundaries of current memory technology.
Career Highlights
Tsung-Yuan Lee is affiliated with Faraday Technology Corporation, where he plays a pivotal role in the research and development of cutting-edge technology. His contributions to the company and the field are marked by his dedication to delivering high-performance storage solutions.
Collaborations
Throughout his career, Tsung-Yuan Lee has collaborated with notable colleagues such as Sheng-Tai Young and Te-Sun Wu. These collaborations have fostered an environment of innovation, enabling the development of advanced technology solutions in the realm of memory storage.
Conclusion
In summary, Tsung-Yuan Lee's contributions to high density ROM technology epitomize the spirit of innovation that drives progress in the electronics industry. His efforts at Faraday Technology Corporation and his collaborations exemplify the importance of teamwork and creativity in solving complex technological challenges. As memory storage continues to evolve, inventors like Tsung-Yuan Lee remain essential to shaping the future of electronic devices.