The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Jan. 06, 2004
Sheng-tai Young, Hsin-Chu Hsien, TW;
Te-sun Wu, Hsin-Chu, TW;
Tsung-yuan Lee, Tai-Chung, TW;
Chih-kang Chiu, Hsin-Chu Hsien, TW;
Sheng-Tai Young, Hsin-Chu Hsien, TW;
Te-Sun Wu, Hsin-Chu, TW;
Tsung-Yuan Lee, Tai-Chung, TW;
Chih-Kang Chiu, Hsin-Chu Hsien, TW;
Faraday Technology Corp., Hsin-Chu, TW;
Abstract
A high density read-only memory (ROM) cell is installed on a silicon substrate for storing data. The ROM cell includes a first doped region being of a second conductive type installed on the silicon substrate, a plurality of first heavily doped regions being of a first conductive type installed in the first doped region, a second doped region being of the second conductive type installed on the silicon substrate, and a gate installed on the surface of the silicon substrate and adjacent to the first doped region and the second doped region.