Tsung-Yuan Chen

Title: Innovations of Tsung-Yuan Chen

Introduction

Tsung-Yuan Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of integrated circuit fabrication, holding two patents that enhance the reliability and performance of electronic devices.

Latest Patents

One of his latest patents focuses on electrostatic discharge protection for integrated circuits during back end-of-line processing. In this innovative approach, devices or sub-circuits are fabricated in distinct electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is created in a separate electrical isolation region. This sub-circuit includes a first diode connected to a first terminal and a second terminal, and a second diode connected in a complementary manner. The design ensures that electrostatic discharge protection is effectively provided to the electrical isolation regions by connecting the B2B diodes sub-circuit to the VSS power supply terminals of the respective devices or sub-circuits. This method enhances the overall robustness of integrated circuits against electrostatic discharge.

Career Highlights

Tsung-Yuan Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing technologies that improve the efficiency and safety of integrated circuits.

Collaborations

He has collaborated with notable coworkers, including Hsi-Yu Kuo and Yu-Lin Chu, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Tsung-Yuan Chen's innovative work in electrostatic discharge protection for integrated circuits showcases his expertise and commitment to enhancing electronic device reliability. His contributions are vital to the ongoing advancements in the semiconductor industry.