Company Filing History:
Years Active: 2022-2025
Title: Tsung-Yu Yang: Innovator in Semiconductor Technology
Introduction
Tsung-Yu Yang is a prominent inventor based in Chiayi County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on innovative manufacturing methods and high voltage semiconductor devices.
Latest Patents
Among his latest patents, Tsung-Yu Yang has developed a manufacturing method for semiconductor devices. This invention includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The design ensures that the gate structure and the gate oxide layer are properly disposed on the semiconductor substrate. Additionally, he has created a high voltage semiconductor device that features a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. This device is designed to enhance performance and reliability in high voltage applications.
Career Highlights
Throughout his career, Tsung-Yu Yang has worked with notable organizations such as United Microelectronics Corporation and National Chung Cheng University. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and contribute to various advancements in the field.
Collaborations
Tsung-Yu Yang has collaborated with esteemed colleagues, including Shin-Hung Li and Ruei-Jhe Tsao. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.
Conclusion
Tsung-Yu Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.