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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11515404 B1

PDFFull Text
Date of Patent:
Nov. 29, 2022

Filed:

Jan. 28, 2021

Semiconductor structure comprising regions having an isolation trench with a stepped bottom surface therebetween and method of forming the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Tsung-Yu Yang, Chiayi County, TW;

Shin-Hung Li, Nantou County, TW;

Ruei-Jhe Tsao, New Taipei, TW;

Ta-Wei Chiu, Changhua County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 27/11 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 27/092 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 27/0207 (2013.01);
Abstract

A semiconductor structure includes a substrate having a first region and a second region around the first region. A first fin structure is disposed within the first region. A second fin structure is disposed within the second region. A first isolation trench is disposed within the first region and situated adjacent to the first fin structure. A first trench isolation layer is disposed in the first isolation trench. A second isolation trench is disposed around the first region and situated between the first fin structure and the second fin structure. The bottom surface of the second isolation trench has a step height. A second isolation layer is disposed in the second isolation trench.

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