Company Filing History:
Years Active: 2022-2025
Title: Ruei-Jhe Tsao: Innovator in Semiconductor Technology
Introduction
Ruei-Jhe Tsao is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative manufacturing methods that enhance the performance and efficiency of semiconductor devices.
Latest Patents
One of Ruei-Jhe Tsao's latest patents is a manufacturing method of a semiconductor device. This invention includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The design ensures that the gate structure and the gate oxide layer are properly disposed on the semiconductor substrate, optimizing the device's functionality. Another notable patent is related to a semiconductor device that features a trench and a gate structure. This invention includes a gate electrode with two portions, one disposed in the trench and the other outside of it, enhancing the overall performance of the semiconductor device.
Career Highlights
Ruei-Jhe Tsao is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Some of Ruei-Jhe Tsao's coworkers include Shin-Hung Li and Tsung-Yu Yang. Their collaborative efforts have played a crucial role in the development of innovative semiconductor solutions.
Conclusion
Ruei-Jhe Tsao's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his importance in the field. His innovative approaches continue to shape the future of semiconductor devices.