This inventor holds 1 USPTO granted patent. Top assignee: National Applied Research Laboratories. Active years: 2018.
Company Filing History:
Years Active: 2018
Title: Tsung-Yu Chan: Innovator in Silicon Substrate Technology
Introduction
Tsung-Yu Chan is a notable inventor based in Miaoli, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the improvement of silicon substrate surfaces. His innovative approach has led to advancements in the quality of native oxide layers, which are crucial for various applications in electronics.
Latest Patents
Tsung-Yu Chan holds a patent titled "Method of irradiating ultraviolet light on silicon substrate surface for improving quality of native oxide layer and apparatus using the same." This invention focuses on the growth of a native oxide layer on silicon substrates. By utilizing deep ultraviolet (UV) light, the quality of the native oxide layer is effectively enhanced. This improvement facilitates easier surface treatment of cross-section samples for scanning capacitance microscopy (SCM). The invention also establishes optimum parameters for irradiation time for both n-type and p-type samples, thereby enhancing the life cycle and reliability of the samples.
Career Highlights
Tsung-Yu Chan is affiliated with the National Applied Research Laboratories, where he continues to work on innovative solutions in semiconductor technology. His research has garnered attention for its practical applications and contributions to the field.
Collaborations
Tsung-Yu Chan has collaborated with notable colleagues, including Ming-Hua Shiao and Chun-Ting Lin. Their combined expertise has furthered advancements in the research and development of semiconductor technologies.
Conclusion
Tsung-Yu Chan's work exemplifies the importance of innovation in the field of semiconductor technology. His contributions, particularly in enhancing the quality of silicon substrate surfaces, have significant implications for the future of electronics.