The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Jun. 22, 2017
National Applied Research Laboratories, Taipei, TW;
Mao-Nan Chang, Hsinchu, TW;
Tsung-Yu Chan, Miaoli County, TW;
Chia-Yi Wu, Kaohsiung, TW;
Chun-Ting Lin, New Taipei, TW;
Ming-Hua Shiao, Hsinchu, TW;
NATIONAL APPLIED RESEARCH LABORATORIES, Taipei, TW;
Abstract
The present invention relates to the growth of a native oxide layer on a surface of a silicon substrate. Deep ultraviolet (UV) light is irradiated to thereby effectively improve the quality of the native oxide layer. By improving the quality, the difficulty of the surface treatment of a cross-section sample for scanning capacitance microscopy (SCM) is improved. The life cycle and reliability of the sample are also improved with enhanced reproducibility for the measurement of SCM. Thus, the present invention provides an improved method and an apparatus using the same to prepare a cross-sectional sample for SCM. The feasibility and the concrete method for enhancing oxide layer quality on a silicon substrate surface by UV light irradiation under a humidity-controlled environment are established. The optimum parameters of irradiation time for n-type and p-type samples are made.