Tsung-han Lu

Title: Tsung-han Lu: Innovator in Memory Circuit Technology

Introduction

Tsung-han Lu is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory circuit technology. His innovative work has led to the development of a unique memory circuit that enhances data storage capabilities.

Latest Patents

Tsung-han Lu holds a patent for a Multi-state One-Time Programmable (MSOTP) memory circuit. This invention includes a memory cell and a programming voltage driving circuit. The memory cell consists of a MOS storage transistor, a first MOS access transistor, and a second MOS access transistor, which are electrically connected to store two bits of data. During the writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor. Conversely, in the reading state, it outputs a reading control potential to the gate of the MOS storage transistor.

Career Highlights

Tsung-han Lu is currently employed at Jmem Technology Co., Ltd. His role at the company allows him to further explore and develop innovative memory technologies. His work has positioned him as a key figure in the advancement of programmable memory circuits.

Collaborations

Tsung-han Lu collaborates with talented individuals such as Chen-Feng Chang and Yu-chen Lo. Their combined expertise contributes to the innovative projects at Jmem Technology Co., Ltd.

Conclusion

Tsung-han Lu's contributions to memory circuit technology exemplify the spirit of innovation. His patent for the Multi-state One-Time Programmable memory circuit showcases his commitment to advancing data storage solutions.