The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Aug. 22, 2023
Jmem Technology Co., Ltd., Taipei, TW;
Chen-Feng Chang, Taoyuan, TW;
Yu-Chen Lo, Taipei, TW;
Tsung-Han Lu, New Taipei, TW;
Shu-Chieh Chang, Taoyuan, TW;
Chun-Hao Liang, New Taipei, TW;
Dong-Yu Wu, Taipei, TW;
Meng-Lin Wu, Taoyuan, TW;
Jmem Technology Co., Ltd., Taipei, TW;
Abstract
The present disclosure provides a multi-state one-time programmable (MSOTP) memory circuit including a memory cell and a programming voltage driving circuit. The memory cell includes a MOS storage transistor, a first MOS access transistor and a second MOS access transistor electrically connected to store two bits of data. When the memory cell is in a writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor, and when the memory cell is in a reading state, the programming voltage driving circuit outputs a reading control potential to the gate of the MOS storage transistor.