Chun-hao Liang

Title: The Innovative Contributions of Chun-hao Liang

Introduction

Chun-hao Liang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory circuits, particularly with his innovative designs that enhance data storage capabilities. His work is characterized by a focus on efficiency and functionality in electronic components.

Latest Patents

Chun-hao Liang holds a patent for a Multi-state One-Time Programmable Memory Circuit. This invention includes a memory cell and a programming voltage driving circuit. The memory cell consists of a MOS storage transistor, a first MOS access transistor, and a second MOS access transistor, which are electrically connected to store two bits of data. During the writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor. Conversely, in the reading state, it outputs a reading control potential to the gate of the MOS storage transistor. This innovative design allows for improved data management and storage efficiency.

Career Highlights

Chun-hao Liang is currently employed at Jmem Technology Co., Ltd., where he continues to develop cutting-edge technologies in memory circuits. His work at Jmem Technology has positioned him as a key player in the advancement of programmable memory solutions.

Collaborations

Chun-hao Liang collaborates with talented colleagues, including Chen-Feng Chang and Yu-chen Lo. Their combined expertise fosters an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

Chun-hao Liang's contributions to the field of memory circuits exemplify the spirit of innovation. His patent for the Multi-state One-Time Programmable Memory Circuit showcases his ability to enhance data storage solutions. As he continues his work at Jmem Technology Co., Ltd., his impact on the industry is sure to grow.