Company Filing History:
Years Active: 2023-2025
Title: Innovations of Inventor Chen-Feng Chang
Introduction
Chen-Feng Chang is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of memory circuits, holding a total of 3 patents. His work focuses on enhancing the functionality and efficiency of memory storage technologies.
Latest Patents
One of his latest patents is the "Multi-state one-time programmable memory circuit." This invention includes a memory cell and a programming voltage driving circuit. The memory cell consists of a MOS storage transistor, a first MOS access transistor, and a second MOS access transistor, which are electrically connected to store two bits of data. During the writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor. Conversely, in the reading state, it outputs a reading control potential to the same gate.
Another significant patent is the "Operation method of multi-bits read only memory." This method involves applying a gate voltage to a conductive gate, a first voltage to a first electrode, and a second voltage to a second electrode. The multi-bits read only memory comprises a substrate and a transistor structure with the conductive gate positioned between the first and second electrodes. A multiplicity of M nanowire channels is mounted between these electrodes, allowing for the storage of multiple bits on the read-only memory, rather than just a single bit.
Career Highlights
Chen-Feng Chang has worked with Jmem Technology Co., Ltd, where he has contributed to various innovative projects. His expertise in memory technology has positioned him as a valuable asset in the industry.
Collaborations
Throughout his career, Chen-Feng has collaborated with notable individuals such as Tien-Sheng Chao and Yu-chen Lo. These collaborations have further enriched his work and expanded the impact of his inventions.
Conclusion
In summary, Chen-Feng Chang is a distinguished inventor whose work in memory circuits has led to multiple patents and significant advancements in technology. His contributions continue to influence the field of memory storage solutions.
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