Jmem Technology Co., Ltd

Other

Chen-Feng Chang

Tien-Sheng Chao

Yu-chen Lo

Shu-chieh Chang

Chun-hao Liang

Dong-yu Wu

Tsung-han Lu

Meng-lin Wu

The present disclosure provides a multi-state one-time programmable (MSOTP) memory circuit including a memory cell and a programming voltage driving circuit. The memory cell includes a MOS storage transistor, a first MOS access transistor and a second MOS access transistor electrically connected to store two bits of data. When the memory cell is in a writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor, and when the memory cell is in a reading state, the programming voltage driving circuit outputs a reading control potential to the gate of the MOS storage transistor.

Multi-state one-time programmable memory circuit

An operation method of a multi-bits read only memory includes a step of applying a gate voltage to a conductive gate, a first voltage to a first electrode, and a second voltage to a second electrode. The multi-bits read only memory includes a substrate and a transistor structure with the conductive gate mounted between the first electrode and the second electrode. A multiplicity of M nanowire channels is mounted between the first electrode and the second electrode, and M is a positive integer greater than one. The operation method breaks multiple states of the multi-bits read only memory. The multiple states are programmable and include an istate, and≤ i≤ M. The aforementioned states allow storage of multiple bits on the read only memory, instead of just storing a single bit on the read only memory.

Operation method of multi-bits read only memory

An operation method of a multi-bits read only memory includes a step of applying a gate voltage to a conductive gate, a first voltage to a first electrode, and a second voltage to a second electrode. The multi-bits read only memory of the present invention includes a substrate and a transistor structure with the conductive gate mounted between the first electrode and the second electrode, a first oxide located between the first electrode and the conductive gate, and a second oxide located between the second electrode and the conductive gate. The present invention creates an initial state wherein the transistor structure is not conducting, an intermediate state wherein the first oxide is punched through by the first voltage, and a fully opened state wherein both the first oxide and the second oxide are punched through. The aforementioned states allow storage of multiple bits on the read only memory.

Growing community of inventors

Taoyuan, Taiwan

Chen-Feng Chang