Miaoli, Taiwan

Tsung-Fu Yen

This inventor holds 3 USPTO granted patents. Top assignee: Taiwan Carbon Nano Technology Corporation. Active years: 2023-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Fu Yen. Retrieved from https://idiyas.com/inventor/tsung-fu-yen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023-2024

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3 patents (USPTO):Explore Patents

Title: **Tsung-Fu Yen: Innovator in Semiconductor Device Manufacturing**

Introduction

Tsung-Fu Yen is a prominent inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of semiconductor device manufacturing, holding a total of three patents. His work primarily focuses on methods that enhance the efficiency and effectiveness of production techniques used in semiconductor technology.

Latest Patents

Tsung-Fu Yen's latest patents revolve around a groundbreaking method for manufacturing semiconductor devices using plasma-enhanced atomic layer deposition. This innovative technique outlines a detailed process involving the provision of a substrate composed of a silicon base and a first oxide layer. The method includes the deposition of a plurality of stacked structures, which consist of both dielectric and conductive layers. Through this process, trenches are formed by etching the stacked structures.

Moreover, the patent elaborates on the deposition of a second oxide layer utilizing a sophisticated plasma-enhanced atomic layer deposition apparatus that features a chamber, an upper electrode, a lower electrode, and a three-dimensional rotation device. The upper electrode, linked to a first radio-frequency power device, is designed to generate plasma, while the lower electrode connects to a second power device. The innovation continues with the deposition of a high resistance layer on top of the second oxide layer, followed by the application of a low resistance layer.

Additionally, he has secured another patent that mirrors the methodology for manufacturing semiconductor devices using plasma-enhanced atomic layer deposition, which similarly involves the deposition and etching processes, but with slight variations to optimize the production.

Career Highlights

Tsung-Fu Yen currently works with Taiwan Carbon Nano Technology Corporation, where he applies his expertise in semiconductor technologies. His advancements in the manufacturing methods signify a strong understanding of complex processes in a field that is crucial for modern electronics.

Collaborations

Throughout his career, Tsung-Fu Yen has collaborated with notable colleagues such as Kuang-Jui Chang and Chun-Hsien Tsai. Together, they contribute to advancing research and application within the semiconductor sector.

Conclusion

Tsung-Fu Yen exemplifies innovation in the semiconductor industry through his impactful patents and collaborative efforts. His contributions continue to shape the landscape of semiconductor device manufacturing, paving the way for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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