The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Oct. 28, 2021
Taiwan Carbon Nano Technology Corporation, Miaoli County, TW;
Tsung-Fu Yen, Miaoli County, TW;
Kuang-Jui Chang, Miaoli County, TW;
Chun-Hsien Tsai, Miaoli County, TW;
Ting-Chuan Lee, Miaoli County, TW;
Chun-Jung Tsai, Miaoli County, TW;
TAIWAN CARBON NANO TECHNOLOGY CORPORATION, Miaoli County, TW;
Abstract
A method for fabricating a semiconductor device by using a plasma-enhanced atomic layer deposition apparatus. A substrate comprising a silicon substrate and a first oxide layer is provided. A plurality of stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form trenches. A second oxide layer is deposited by using a plasma-enhanced atomic layer deposition apparatus that includes a chamber, an upper electrode, a lower electrode, and a three-dimensional rotation device. The upper electrode is connected to a first radio-frequency power device. The upper electrode is configured to generate a plasma. The lower electrode is connected to a second radio-frequency power device. The three-dimensional rotation device drives the substrate to rotate. A high resistance layer is deposited on the second oxide layer. A low resistance layer is deposited on the high resistance layer.