logo

For the Inventor, By the Inventor

Kawasaki, Japan

Tsunenori Yamauchi

This inventor holds 6 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1992-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsunenori Yamauchi. Retrieved from https://idiyas.com/inventor/tsunenori-yamauchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 6

% Patents Active = 66.7

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 67(Granted Patents)


Company Filing History:

goldMedal6 out of 39,378 
 
Fujitsu Corporation
 patents

Years Active: 1992-2008

Loading Chart...
6 patents (USPTO):Explore Patents
1. 7348630 - Semiconductor device for high frequency uses and manufacturing method of the same (2008-03-25),
2. 6838349 - Semiconductor device and method for fabricating the same (2005-01-04),
3. 6528382 - Semiconductor device and method for fabricating the same (2003-03-04),
4. 5518937 - Semiconductor device having a region doped to a level exceeding the (1996-05-21),
5. 5270224 - Method of manufacturing a semiconductor device having a region doped to (1993-12-14),
6. 5111266 - Semiconductor device having a region doped to a level exceeding the (1992-05-05),

Title: Tsunenori Yamauchi: Innovator in Semiconductor Technology

Introduction

Tsunenori Yamauchi is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices, particularly for high-frequency applications.

Latest Patents

Yamauchi's latest patents include innovative designs for semiconductor devices aimed at improving high-frequency operations. One of his notable inventions is a semiconductor device for high-frequency uses, which features a semiconductor substrate, gate electrodes, and impurity diffusion layers. This design enhances the maximum transmission frequency and power gain, making it suitable for high-frequency power amplifiers. Another significant patent involves a semiconductor device and method for fabricating the same, which incorporates a base layer of silicon germanium containing carbon. This design effectively prevents the diffusion of boron during heat processing, ensuring the stability of the device.

Career Highlights

Tsunenori Yamauchi is currently employed at Fujitsu Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that meet the demands of modern high-frequency applications. His innovative approach and technical expertise have established him as a key figure in the semiconductor industry.

Collaborations

Yamauchi has collaborated with several talented individuals in his field, including Yuji Furumura and Fumitake Mieno. These collaborations have contributed to the advancement of semiconductor technologies and have fostered a spirit of innovation within the industry.

Conclusion

Tsunenori Yamauchi's contributions to semiconductor technology are noteworthy, with a focus on high-frequency applications. His patents reflect a commitment to innovation and efficiency, solidifying his reputation as a leading inventor in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…