Tsunehiro Kita

Title: Tsunehiro Kita: Innovator in Semiconductor Technology

Introduction

Tsunehiro Kita is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for manufacturing semiconductor substrates, particularly those with shallow trench isolation (STI) structures.

Latest Patents

Kita's latest patents include a method of manufacturing a substrate having shallow trench isolation. This invention provides a semiconductor substrate with an STI structure, where grooves are selectively formed at predetermined locations. Oxide films, using organic silicon sources as material, are buried in these grooves as buried oxide films. The invention is characterized by the annealing of the buried oxide films at a temperature range of 1100 to 1350°C, either before or after planarization of the semiconductor substrate. This process allows for the formation of ring structures of more than 5-fold and less than 4-fold at predetermined rates in the buried oxide films. The annealing process effectively relaxes the stress of the buried oxide films, thereby suppressing the generation of dislocations.

Career Highlights

Tsunehiro Kita is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work has been instrumental in advancing semiconductor manufacturing techniques, contributing to the overall efficiency and reliability of semiconductor devices.

Collaborations

Kita has collaborated with notable coworkers, including Yoshiaki Matsushita and Atsushi Yagishita. Their combined expertise has further enhanced the innovative capabilities within their projects.

Conclusion

Tsunehiro Kita's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor manufacturing processes.