Hitachi, Japan

Tsubasa Moritsuka

This inventor holds 1 USPTO granted patent. Top assignee: Minebea Power Semiconductor Device Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsubasa Moritsuka. Retrieved from https://idiyas.com/inventor/tsubasa-moritsuka-oc9f3u1i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Tsubasa Moritsuka and Semiconductor Device Innovation.

Introduction

Tsubasa Moritsuka is an inventor associated with Hitachi, Japan, and Minebea Power Semiconductor Device Inc. His patent work addresses semiconductor devices and power conversion technology.

Latest Patents

Moritsuka is credited with 1 patent, titled “Semiconductor Device and Power Conversion Device.” The invention describes a semiconductor device designed to improve resistance to electrical bias under high-temperature and high-humidity conditions while maintaining a reliable connection between a floating field-limiting layer and a field plate.

The device has a floating field-limiting layer in its termination region and a polysilicon field plate. An aluminum electrode connects the field plate and the field-limiting layer, with separate contacts used for each connection. The patent also describes a power conversion device that uses the semiconductor device.

Career Highlights

Moritsuka’s listed patent reflects work on semiconductor reliability and power conversion. The disclosed structure focuses on improving environmental resistance and the electrical connections within the device.

Collaborations

Masaki Shiraishi and Daisuke Kawase are identified as Moritsuka’s coworkers. The available information does not specify their roles in the patent or the invention.

Conclusion

Tsubasa Moritsuka’s patent presents a semiconductor-device design intended to strengthen performance in demanding environmental conditions and support power conversion applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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