Pan-Chiao, Taiwan

Tso-Ming Chang


Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 61(Granted Patents)


Company Filing History:


Years Active: 2000-2002

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2 patents (USPTO):Explore Patents

Title: Tso-Ming Chang: Innovator in Integrated Circuit Technology

Introduction

Tso-Ming Chang is a notable inventor based in Pan-Chiao, Taiwan. He has made significant contributions to the field of integrated circuits, particularly in memory technology. With a total of 2 patents, his work focuses on enhancing the efficiency and functionality of memory devices.

Latest Patents

One of Tso-Ming Chang's latest patents is the "Method and integrated circuit for bit line soft programming (BLISP)." This innovative method provides an efficient way to perform a soft program after erasing floating gate memory cells. The BLISP method allows for the selection of a bit line and applies the soft program to corresponding subject bit lines, ensuring low current consumption compared to traditional bulk soft programming methods. Another significant patent is for a "Memory supporting multiple address protocols." This invention introduces a new memory device designed for microprocessors that can boot from either the top or bottom of a memory map. It includes a memory array and decoders that facilitate memory access requests in both top-down and bottom-up address protocols.

Career Highlights

Tso-Ming Chang is currently employed at Macronix International Co., Ltd., where he continues to develop cutting-edge memory technologies. His work has been instrumental in advancing the capabilities of integrated circuits, particularly in the context of memory efficiency and performance.

Collaborations

Some of Tso-Ming Chang's coworkers include Tzeng-Huei Shiau and Ray-Lin Wan, who contribute to the innovative environment at Macronix International Co., Ltd.

Conclusion

Tso-Ming Chang's contributions to integrated circuit technology, particularly through his patents, highlight his role as a key innovator in the field. His work continues to influence advancements in memory technology, making significant strides in efficiency and functionality.

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