This inventor holds 1 USPTO granted patent. Top assignee: National Science Council. Active years: 1997.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1997
Title: Innovations of Tso-Hung Fan in Semiconductor Technology
Introduction
Tso-Hung Fan is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in enhancing the growth rate of silicon dioxide layers.
Latest Patents
Tso-Hung Fan holds a patent for a method that enhances the growth rate of a silicon dioxide layer grown by a liquid phase deposition method. This innovative approach involves a reaction mixture composed of a hydrosilicofluoric acid aqueous solution that is supersaturated with silicon dioxide. The semiconductor substrate is treated with ultrasonic oscillation at a frequency ranging between 20 and 100 KHz and at a temperature between 10°C and 50°C. This method accelerates the growth rate of the silicon dioxide layer formed on the semiconductor substrate.
Career Highlights
Tso-Hung Fan is associated with the National Science Council, where he has been involved in various research projects aimed at advancing semiconductor technologies. His work has been instrumental in improving the efficiency and effectiveness of semiconductor manufacturing processes.
Collaborations
Tso-Hung Fan collaborates with Ching-Fa Yeh, who is also a prominent figure in the field. Their partnership has led to advancements in semiconductor research and development.
Conclusion
Tso-Hung Fan's innovative methods in semiconductor technology demonstrate his commitment to enhancing manufacturing processes. His contributions are vital for the ongoing development of efficient semiconductor solutions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile