Shanghai, China

Tsingfa Li

This inventor holds 1 USPTO granted patent. Top assignee: Sandisk Technologies Inc.. Active years: 2026.


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Tsingfa Li - Innovator in Memory System Recovery Techniques

Introduction

Tsingfa Li is a notable inventor based in Shanghai, China. He has made significant contributions to the field of memory systems, particularly in programming techniques that enhance reliability and recovery from failures. His innovative approach has led to the development of a patent that addresses critical issues in memory operations.

Latest Patents

Tsingfa Li holds a patent titled "Die level failure recovery." This patent discloses programming techniques that can be utilized to recover from potential plane and/or die level failures. The memory system is designed to detect evidence of a failure that impacts memory operations in a target region of the blocks. If a first programming technique results in a significant number of memory operation failures, the system switches to a second programming technique. This adaptive approach allows the blocks to be tested for reliability after programming, ensuring continued usability despite the initial failures.

Career Highlights

Tsingfa Li is currently employed at SanDisk Technologies Inc., where he continues to innovate in the field of memory systems. His work focuses on enhancing the reliability of memory operations, which is crucial for the performance of modern electronic devices. His expertise in programming techniques has positioned him as a valuable asset in his field.

Collaborations

Tsingfa Li collaborates with talented individuals such as Xuan Tian and Liang Li. Together, they work on advancing memory system technologies and addressing challenges related to memory operations.

Conclusion

Tsingfa Li's contributions to memory system recovery techniques demonstrate his commitment to innovation and excellence in technology. His patent reflects a significant advancement in the field, ensuring that memory systems can effectively recover from failures.

Profile summary based on public USPTO records.
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