Tainan, Taiwan

Tseng-Fang Dai

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: United Microelectronics Corp.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tseng-Fang Dai. Retrieved from https://idiyas.com/inventor/tseng-fang-dai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tseng-Fang Dai in Non-Volatile Memory Technology

Introduction

Tseng-Fang Dai is an innovative inventor based in Tainan, Taiwan. With a profound understanding of semiconductor technology, he has made significant contributions in the field of non-volatile memory cells. His work is particularly notable for its implications in enhancing memory storage devices.

Latest Patents

One of Dai's significant patents is centered on the "Method for manufacturing silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell." This patent outlines a sophisticated method that begins with the formation of an implant region in a substrate. Dai's innovation includes the stacking of a first oxide layer, a nitride layer, and a second oxide layer on the substrate, where the second oxide layer exhibits a higher density than the first. The process involves creating a first photoresist pattern, executing a first wet etching process to establish an oxide hard mask, and then forming a nitride pattern after a second wet etching process. Additionally, Dai includes a cleaning process to prepare the substrate for the eventual formation of a gate oxide layer, enhancing the efficiency and reliability of memory cells used in various electronic devices.

Career Highlights

Tseng-Fang Dai currently works with United Microelectronics Corporation, a prominent player in the semiconductor industry. His role allows him to leverage his skills in semiconductor fabrication and memory technology. With one patent to his name, Dai's work reflects a commitment to pushing the boundaries of technology and innovation in the field.

Collaborations

Throughout his career, Dai has collaborated with other talented professionals such as Kun-I Chou and Chi-Cheng Huang. These collaborations highlight the importance of teamwork and shared knowledge in achieving breakthroughs in technology, particularly in the competitive landscape of semiconductor manufacturing.

Conclusion

In summary, Tseng-Fang Dai is an influential inventor whose contributions to the development of SONOS non-volatile memory cells are significant. His innovative methods and collaborative spirit not only enhance memory technology but also serve as an inspiration to fellow inventors and researchers in the field. As the semiconductor industry continues to evolve, Dai’s work will likely play an essential role in shaping the future of memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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