Tse-Wei Lu

Title: Innovations of Tse-Wei Lu in Silicon Technology

Introduction

Tse-Wei Lu is a prominent inventor based in Hsinchu, Taiwan, known for his significant contributions to silicon technology. He holds a total of four patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

One of his latest patents is focused on nitrogen-doped and vacancy-dominated silicon ingots and thermally treated wafers. This invention provides a method for producing nitrogen-doped CZ silicon crystal ingots and wafers that exhibit a radially uniform distribution of oxygen precipitation density and size. The technology addresses the lack of a significant edge effect in post-epitaxial thermally treated wafers. Additionally, the patent outlines methods for controlling the pull rate from molten silicon, the temperature gradient, and nitrogen concentration to enhance the quality of the silicon ingots. Furthermore, it includes methods for simulating the radial bulk micro defect size distribution, density distribution, and oxygen precipitation density distribution of the wafers sliced from nitrogen-doped CZ silicon crystals.

Career Highlights

Tse-Wei Lu is currently employed at Globalwafers Co., Ltd., where he continues to advance his research and development in silicon technologies. His work has been instrumental in improving the performance and reliability of silicon wafers used in various applications.

Collaborations

He collaborates with notable colleagues, including Zheng Lu and Gaurab Samanta, contributing to a dynamic research environment that fosters innovation and technological advancement.

Conclusion

Tse-Wei Lu's contributions to silicon technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence the development of advanced materials and processes in the semiconductor industry.