This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Ememory Technology Inc.. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Innovations of Tsao-Hsin Yang
Introduction
Tsao-Hsin Yang is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory technology, particularly in the development of unique memory cells that enhance security and functionality.
Latest Patents
One of his key patents is titled "One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method." This invention involves an OTP memory cell designed for PUFF technology, which includes a first select transistor, a first antifuse transistor, and a second antifuse transistor. The configuration of these components allows for improved security in memory applications.
Career Highlights
Tsao-Hsin Yang is currently employed at Ememory Technology Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory cells and their applications in various technologies.
Collaborations
He collaborates with Ping-Lung Ho, another professional in the field, to further enhance their research and development efforts.
Conclusion
Tsao-Hsin Yang's contributions to memory technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in secure memory applications.