One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method

Abstract

An OTP memory cell for a PUFF technology includes a first select transistor, a first antifuse transistor and a second antifuse transistor. A first drain/source terminal of the first select transistor is connected with a bit line. A gate terminal of the first select transistor is connected with a word line. A gate terminal of the first antifuse transistor is connected with a second drain/source terminal of the first select transistor. Two drain/source terminals of the first antifuse transistor are connected with a first antifuse control line. A gate terminal of the second antifuse transistor is connected with a second drain/source terminal of the first select transistor. Two drain/source terminals of the second antifuse transistor are connected with a second antifuse control line.