This inventor holds 1 USPTO granted patent. Top assignee: Globalwafers Co., Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Tsan-Feng Lu: Innovator in Crystal Defect Identification
Introduction
Tsan-Feng Lu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of materials science, particularly in the identification of defects in crystals. His innovative methods have implications for various applications in semiconductor technology.
Latest Patents
Tsan-Feng Lu holds a patent for a "Method of identifying defects in crystals." This method involves slicing a silicon carbide crystal to obtain a test piece, followed by an etching process. The etching conditions include using an etchant with potassium hydroxide at temperatures ranging from 400° C. to 550° C. in an environment with dry air or oxygen. This process results in the formation of etching pits of threading edge dislocations (TED) and threading screw dislocations (TSD). The diameter ratio of these etching pits, observed under an optical microscope, falls within the range of 0.2 to 0.5.
Career Highlights
Tsan-Feng Lu is currently associated with GlobalWafers Co., Ltd., where he continues to advance his research and development efforts. His work has been instrumental in enhancing the understanding of crystal defects, which is crucial for improving the quality of semiconductor materials.
Collaborations
Some of his notable coworkers include Yewchung Sermon Wu and Bing-Yue Tsui. Their collaborative efforts contribute to the innovative research environment at GlobalWafers Co., Ltd.
Conclusion
Tsan-Feng Lu's contributions to the field of crystal defect identification exemplify the importance of innovation in materials science. His patented methods pave the way for advancements in semiconductor technology and highlight the significance of thorough research in this domain.