Hsinchu, Taiwan

Tsai Hsi-Chen

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsai Hsi-Chen. Retrieved from https://idiyas.com/inventor/tsai-hsi-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tsai Hsi-Chen

Introduction

Tsai Hsi-Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on aluminum structures and their applications in electronic devices.

Latest Patents

Tsai Hsi-Chen holds 1 patent related to aluminum structures. His patent describes devices with aluminum structures and methods of fabrication. An exemplary device includes an interconnect structure and an aluminum structure that is electrically connected to the interconnect structure. The aluminum structure consists of a first aluminum layer, a migration barrier layer over the first aluminum layer, and a second aluminum layer over the migration barrier layer.

Career Highlights

Tsai Hsi-Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited. His role at this leading semiconductor company allows him to work on cutting-edge technologies and innovations in the industry.

Collaborations

Some of his notable coworkers include Chia-Pang Kuo and Sean Yang. Their collaborative efforts contribute to advancements in semiconductor technology and innovation.

Conclusion

Tsai Hsi-Chen's work in aluminum structures showcases his innovative spirit and dedication to advancing technology in the semiconductor industry. His contributions are valuable to the ongoing development of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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