Tracey L Krakowski

Title: Innovations of Tracey L Krakowski

Introduction

Tracey L Krakowski is a prominent inventor based in Palo Alto, California. She has made significant contributions to the field of semiconductor technology, holding three patents to her name. Her work focuses on innovative methods that enhance the performance and integration of diodes in integrated circuits.

Latest Patents

One of her latest patents is the Silicon IMPATT diode, which presents a method to integrate a vertical IMPATT diode in a planar process. This innovation aims to improve the efficiency and functionality of semiconductor devices. Another notable patent is the Integration of a BARITT diode, which describes a vertically oriented BARITT diode formed within an integrated circuit. This diode features a source located near the top surface of the substrate, a drift region directly beneath the source, and a collector situated below the drift region. The design includes a dielectric isolation structure that surrounds the drift region, extending from the source to the collector. Additionally, the source may incorporate a silicon germanium layer or a Schottky barrier contact.

Career Highlights

Tracey L Krakowski is currently employed at Texas Instruments Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing advanced diode structures that enhance circuit performance.

Collaborations

Throughout her career, she has collaborated with notable colleagues, including Xiaochuan Bi and Doug Weiser. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Tracey L Krakowski's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in her field. Her work continues to influence advancements in integrated circuit design and functionality.