The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Nov. 04, 2015
Texas Instruments Incorporated, Dallas, TX (US);
Xiaochuan Bi, Sunnyvale, CA (US);
Tracey L Krakowski, Palo Alto, CA (US);
Suman Banerjee, Plano, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A vertically oriented BARITT diode is formed in an integrated circuit. The BARITT diode has a source proximate to the top surface of the substrate of the integrated circuit, a drift region immediately below the source in the semiconductor material of the substrate, and a collector in the semiconductor material of the substrate immediately below the drift region. A dielectric isolation structure laterally surrounds the drift region, extending from the source to the collector. The source may optionally include a silicon germanium layer or may optionally include a schottky barrier contact.