Towhidur Razzak

Title: Innovations of Towhidur Razzak in NAND Memory Technology

Introduction

Towhidur Razzak is a notable inventor based in Santa Clara, CA, who has made significant contributions to the field of NAND memory technology. With a total of three patents to his name, Razzak's work focuses on improving the performance and efficiency of non-volatile memory systems.

Latest Patents

Razzak's latest patents include innovative methods that enhance the functionality of NAND memory. One of his patents, titled "Word line dependent pass voltage ramp rate to improve performance of NAND memory," introduces different ramp rates for various regions of word lines during program operations. This approach takes into account the varying resistance and capacitance (RC) values across the NAND memory array, allowing for optimized performance by assigning different ramp rates to multiple zones of word lines.

Another significant patent is "Non-volatile memory with programmable resistance non-data word line." This invention aims to reduce peak and average current through the channel during program-verify operations. By programming dummy memory cells connected to a dummy word line before the data memory cells, Razzak's method effectively lowers power consumption. The dummy memory cells can be programmed to different threshold voltages based on the specific data word line being addressed, further enhancing efficiency.

Career Highlights

Towhidur Razzak has established himself as a key figure in the field of memory technology through his innovative patents and contributions. His work at Sandisk Technologies Inc. has positioned him at the forefront of advancements in NAND memory systems.

Collaborations

Razzak has collaborated with talented individuals such as Jiahui Yuan and Abu Naser Zainuddin, contributing to the development of cutting-edge memory technologies.

Conclusion

Towhidur Razzak's innovative work in NAND memory technology showcases his expertise and commitment to enhancing memory performance. His patents reflect a deep understanding of the complexities involved in memory systems, making him a valuable contributor to the field.