Tokyo, Japan

Toshiyuki Sakuma

This inventor holds 6 USPTO granted patents and 2 published patent applications and 6 EPO patents. Top assignees: Nec Corporation, Ball Semiconductor Corporation. Active years: 1993-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiyuki Sakuma. Retrieved from https://idiyas.com/inventor/toshiyuki-sakuma-bfrl59vf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 6 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 119(Granted Patents)


Company Filing History:


Years Active: 1993-2000

Loading Chart...
Loading Chart...
6 patents (USPTO):Explore Patents

Title: The Innovations of Toshiyuki Sakuma

Introduction

Toshiyuki Sakuma is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on advanced methods for chemical vapor deposition and semiconductor device design.

Latest Patents

One of his latest patents is titled "Method and apparatus for blanket aluminum CVD on spherical integrated." This invention discloses a method and apparatus for metal-organics chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure. The method includes pretreating the spherical substrate with a vapor of a first precursor in preparation for the deposition of a metal layer. The pretreated spherical substrate is then exposed to a thermally dissociated precursor of metal for depositing the metal layer onto the spherical substrate. This exposure ensures a uniformly deposited metal layer coverage over the pretreated spherical substrate. The deposited metal layer is subsequently annealed and cooled.

Another notable patent is related to a compact semiconductor device that includes a thin film capacitor. This device features a substrate, at least one thin film capacitor with a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric layer. The lower electrode layer is surrounded by an insulator layer of Si₃N₄.

Career Highlights

Toshiyuki Sakuma has worked with notable companies such as NEC Corporation and Ball Semiconductor Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Throughout his career, Sakuma has collaborated with talented individuals, including Shintaro Yamamichi and Yoichi Miyasaka. These collaborations have fostered an environment of innovation and creativity, leading to the development of advanced technologies.

Conclusion

Toshiyuki Sakuma's contributions to the field of semiconductor technology are noteworthy. His innovative patents and collaborations with esteemed colleagues highlight his commitment to advancing the industry. His work continues to influence the development of new technologies in the semiconductor sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…