The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1996
Filed:
Jul. 15, 1992
Applicant:
Inventors:
Toshiyuki Sakuma, Tokyo, JP;
Yoichi Miyasaka, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 60 ; 437919 ; 216-6 ; 216 22 ;
Abstract
According to a method of fabricating a memory cell for a semiconductor integrated circuit, a lower electrode having a predetermined shape is formed on a semiconductor layer. A first insulating interlayer is formed on an entire surface of the semiconductor layer such that only a top surface of the lower electrode is exposed. A dielectric having a high dielectric constant is formed on the lower electrode and on the semiconductor layer. An upper electrode is formed on the dielectric having a high dielectric constant. The upper electrode constitutes a capacitor with the lower electrode through the dielectric.