This inventor holds 1 USPTO granted patent. Top assignee: Kyocera Corporation. Active years: 2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2007
Title: Toshiya Matsuda: Innovator in Semiconductor Technology
Introduction
Toshiya Matsuda is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of innovative semiconductor apparatuses.
Latest Patents
Matsuda holds a patent for a semiconductor apparatus, which includes a substrate made of a diboride single crystal expressed by a chemical formula XB. This formula includes at least one of Ti, Zr, Nb, and Hf. The apparatus features a semiconductor buffer layer formed on a principal surface of the substrate, made of AlGaN (0 ≤ y ≤ 1). Additionally, it includes a nitride semiconductor layer formed on the semiconductor buffer layer, which comprises at least one or multiple kinds selected from among 13 group elements and As. He has 1 patent to his name.
Career Highlights
Matsuda is associated with Kyocera Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of high-performance semiconductor devices that are essential in various applications.
Collaborations
Matsuda has collaborated with notable figures in the field, including Isamu Akasaki and Hiroshi Amano. Their collective efforts have furthered research and innovation in semiconductor technology.
Conclusion
Toshiya Matsuda's contributions to semiconductor technology highlight his role as an influential inventor. His innovative work continues to impact the industry significantly.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile