The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2007

Filed:

Feb. 28, 2006
Applicants:

Isamu Akasaki, Nagoya, JP;

Hiroshi Amano, Nagoya, JP;

Satoshi Kamiyama, Nagoya, JP;

Takanori Yasuda, Kyoto, JP;

Toshiya Matsuda, Kyoto, JP;

Inventors:

Isamu Akasaki, Nagoya, JP;

Hiroshi Amano, Nagoya, JP;

Satoshi Kamiyama, Nagoya, JP;

Takanori Yasuda, Kyoto, JP;

Toshiya Matsuda, Kyoto, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlGaN (0<y≦1), and a nitride semiconductor layer which is formed on the semiconductor buffer layer and which includes at least one kind or plural kinds selected from among 13 group elements and As.


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