Isehara, Japan

Toshiro Ono

This inventor holds 4 USPTO granted patents. Top assignees: Nippon Telegraph and Telephone Public Corporation, Nippon Electric Co., Ltd.. Active years: 1979-1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiro Ono. Retrieved from https://idiyas.com/inventor/toshiro-ono-78obcads

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 204(Granted Patents)


Location History:

  • Tokorozawa, JP (1979)
  • Isehara, JP (1984 - 1985)

Company Filing History:


Years Active: 1979-1985

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4 patents (USPTO):Explore Patents

Title: The Innovations of Inventor Toshiro Ono

Introduction

Toshiro Ono, an accomplished inventor based in Isehara, Japan, has made significant contributions to the fields of lithography and thin film technology. With a portfolio of four patents, Ono has established himself as a pioneer in developing advanced methods and apparatus for fabricating high-quality materials.

Latest Patents

Among his latest innovations, Ono has developed an X-ray lithography mask and a method for fabricating the same. This invention features an X-ray absorber layer made from a single layer of high melting point metals like Tantalum (Ta) and Tungsten (W). By forming granular crystal grains on the mask substrate, this technology effectively reduces internal stress within the layer. The resultant fine pattern is created through reactive sputter etching using CBrF3 gas as an etchant, ensuring high dimensional accuracy and a superior pattern contrast.

Additionally, Ono has patented a plasma deposition method and apparatus. This invention includes a plasma formation chamber for introducing gas to create plasma, a specimen chamber for placing substrates, and a target made from sputtering material. Through a coordinated mechanism, ions are extracted from the plasma stream to facilitate the sputtering process, allowing for the formation of high-quality thin films of various metals and compounds at low temperatures. This invention significantly enhances the control over the characteristics of the thin films being produced.

Career Highlights

Toshiro Ono's career includes prominent positions at notable companies such as Nippon Telegraph and Telephone Public Corporation and Nippon Electric Co., Ltd. His work in these institutions has enabled him to excel in innovations that bridge advanced materials and technology.

Collaborations

Throughout his career, Ono has collaborated with talented colleagues, including Seitaro Matsuo and Hideo Yoshihara. These partnerships have contributed to the development of leading-edge technologies and fostered a rich environment for research and innovation.

Conclusion

Toshiro Ono's inventive spirit and commitment to advancing technology are evident in his patents and collaborations. His work in the fields of X-ray lithography and plasma deposition continues to influence the way materials are fabricated, providing a foundation for future innovations in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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