The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1985
Filed:
Jul. 15, 1983
Applicant:
Inventors:
Hideo Yoshihara, Yokohama, JP;
Akira Ozawa, Ebina, JP;
Misao Sekimoto, Yokohama, JP;
Toshiro Ono, Isehara, JP;
Assignee:
Nippon Telegraph & Telephone Public Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430323 ; 430324 ; 430966 ; 378 35 ; 2041 / ; 2041 / ; 2041 / ;
Abstract
An X-ray absorber layer in the form of single layer of high melting point metal such as Ta, W is formed with granular crystal grains on a mask substrate, so that an internal stress of the layer is reduced. A fine pattern is formed from the absorber layer by reactive sputter etching using CBrF.sub.3 gas as an etchant, so that an X-ray absorber pattern is formed on the mask substrate. The X-ray lithography mask thus fabricated has a fine pattern such as submicron pattern with a high degree of pattern contrast and a high dimensional accuracy.